TY  - GEN 
AU  - Padilla De la Torre, José Luis
AU  - Medina Bailón, Cristina
AU  - Navarro Moral, Carlos
AU  - Alper, C
AU  - Gámiz Pérez, Francisco Jesús
AU  - Ionescu, Adrian Mihai
PY  - 2017
UR  - https://hdl.handle.net/10481/100706
AB  - Within the research in bilayer tunneling field-effect transistors (TFETs) exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, simulation results for the heterogate electron-hole bilayer TFET...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE)
KW  - heterogate electron–hole bilayer TFET
KW  - quantum confinement
KW  - band-to-band tunneling
KW  - occupancy probabilities
KW  - steep slope transistors
TI  - Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
DO  - 10.1109/TED.2017.2777666
ER  -