TY  - GEN 
AU  - Marquez, Carlos
AU  - Navarro Moral, Carlos
AU  - Navarro, Santiago
AU  - Padilla De la Torre, José Luis
AU  - Donetti, Luca
AU  - Galy, P
AU  - Kim, Y-T
AU  - Gamiz, Francisco
PY  - 2019
UR  - https://hdl.handle.net/10481/100443
AB  - This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as...
LA  - eng
TI  - On the Low-Frequency Noise Characterization of Z2-FET Devices
DO  - 10.1109/ACCESS.2019.2907062
ER  -