A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications Ganeriwala, Mohit D. Motos-Espada, Roberto Marin, Enrique G. Cuesta-Lopez, Juan García Palomo, Mikel Rodríguez Santiago, Noel Ruiz, Francisco G. Godoy Medina, Andrés Laser-induced graphene Memristors 2D materials Two-dimensional graphene and graphene-based materials are attracting increasing interest in neuromorphic computing applications by the implementation of memristive architectures that enable the closest solid-state equivalent to biological synapses and neurons. However, the state-of-the-art fabrication methodology involves routine use of high-temperature processes and multistepped chemical synthesis, often on a rigid substrate constraining the experimental exploration in the field to high-tech facilities. Here, we demonstrate the use of a one-step process using a commercial laser to fabricate laser-induced graphene (LIG) memristors directly on a flexible polyimide substrate. For the first time, a volatile resistive switching phenomenon is reported in the LIG without using any additional materials. The absence of any precursor or patterning mask greatly simplifies the process while reducing the cost and providing greater controllability. The fabricated memristors show multilevel resistance-switching characteristics with high endurance and tunable timing characteristics. The recovery time and the trigger pulse-dependent state change are shown to be highly suitable for its use as a synaptic element and in the realization of leaky-integrate and fire neuron in neuromorphic circuits. 2024-09-26T11:27:12Z 2024-09-26T11:27:12Z 2024 journal article Ganeriwala, M.D. et. al. Interfaces 2024, 16, 49724−49732. [https://doi.org/10.1021/acsami.4c07589] https://hdl.handle.net/10481/95160 10.1021/acsami.4c07589 eng info:eu-repo/grantAgreement/EC/MSC/101032701 http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional American Chemical Society