Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices Maldonado, David Roldán Aranda, Juan Bautista The authors thank the support of the Federal Ministry of Education and Research of Germany under Grant 16ME0092. They also acknowledge project PID2022-139586NB-C44 funded by MCIN/AEI/10.13039/501100011033 and FEDER, EU. The ASCENT+ Access to European Infrastructure supported Samuel Aldana Delgado for Nanoelectronics Program, funded through the EU Horizon Europe programme, grant no 871130. The drift characteristics of valence change memory (VCM) devices have been analyzed through both experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance states (LRS) over a 24-hour period at room temperature, we aim to assess the device temporal stability and retention. Our results demonstrate the feasibility of multi-level operation and reveal insights into the conductive filament (CF) dynamics. The cumulative distribution functions (CDFs) of read-out currents measured at different time intervals provide a comprehensive view of the device performance for the different conductance levels. These findings not only enhance the understanding of VCM device switching behaviour but also allow the development of strategies for improving retention, thereby advancing the development of reliable nonvolatile resistive switching memory technologies. 2024-09-20T11:42:34Z 2024-09-20T11:42:34Z 2024-09-15 journal article Maldonado, David y Roldán Aranda, Juan Bautista. Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices. Nanoscale. DOI: 10.1039/d4nr02975e https://hdl.handle.net/10481/94787 10.1039/d4nr02975e eng info:eu-repo/grantAgreement/EC/HorizonEurope/871130 http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional Royal Society of Chemistry