Variability in HfO2-based memristors described with a new bidimensional statistical technique Acal González, Christian José Maldonado Correa, David Cantudo Gómez, Antonio Bargallo González, Mireia Jiménez Molinos, Francisco Campabadal, F. Roldán, J. B. A new statistical analysis is presented to assess cycle-to-cycle variability in resistive memories. This method employs two-dimensional (2D) distributions of parameters to analyse both set and reset voltages and currents, coupled with a 2D coefficient of variation (CV). This 2D methodology significantly enhances the analysis, providing a more thorough and comprehensive understanding of the data compared to conventional one-dimensional methods. Resistive switching (RS) data from two different technologies based on hafnium oxide are used in the variability study. The 2D CV allows a more compact assessment of technology suitability for applications such as non-volatile memories, neuromorphic computing and random number generation circuits. 2024-07-19T09:18:43Z 2024-07-19T09:18:43Z 2024-05-07 journal article Acal, C. et. al. Nanoscale, 2024, 16, 10812–10818. [https://doi.org/10.1039/D4NR01237B] https://hdl.handle.net/10481/93250 10.1039/D4NR01237B eng http://creativecommons.org/licenses/by-nc/4.0/ open access Atribución-NoComercial 4.0 Internacional Royal Society of Chemistry