Low-Frequency Noise in InGaAs-OI Transistors Márquez González, Carlos Navarro Moral, Carlos Karg, Siegfried Ortega López, Rubén Zota, Cezar Gámiz Pérez, Francisco Jesús Reliability Semiconductors 1T-DRAM III-V materials This work has been partially funded by C-ING-357-UGR23 project (supported by the Andalusian University, Investigation and Innovation Council and by the EU FEDER Andalucía 2021-2027) and by the Spanish Projects MCIN/AEI PID2021−128547OB−I00, PID2020−119668GB−100 and MCIN/AEI PLEC2022-009381 with European Union NextGeneration EU/PRTR support. Devices were fabricated under the European Project REMINDER 687931 and C. Marquez was supported by MSCA 895322 TRAPS-2D. III-V compounds have recently attracted high expectation due to their potential to relieve the semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors have recently proved to operate as single transistor DRAM exploiting the floating-body effect, enabling getting rid of the external capacitor and minimizing the cell footprint. However, extensive characterization of the interface quality and disturbing mechanisms affecting the device operation are still required. This work addresses the low frequency noise characterization of these III-V InGaAs transistors focusing on their DRAM operation. The experimentally extracted power spectral density of current follows a flicker-noise characteristic which points to carrier number fluctuations as the main noise source. However, mobility degradation associated to trapping-detrapping carrier phenomena has to be also taken into account to model the device operation. Finally, the device dimension and the back-gate bias dependence on the effective trap density have been evaluated. 2024-07-12T09:43:08Z 2024-07-12T09:43:08Z 2024 info:eu-repo/semantics/article Published version: Márquez González, C. et al. Low-Frequency Noise in InGaAs-OI Transistors IEEE Transactions on Electron Devices, Vol. 71, Núm. 6, pp. 3964-3969. https://doi.org/10.1109/TED.2024.3392180 https://hdl.handle.net/10481/93093 10.1109/TED.2024.3392180 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivatives 4.0 Internacional IEEE