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      <dc:title>Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory</dc:title>
      <dc:creator>Calixto Molina, Manuel</dc:creator>
      <dc:date>2024-01-02T10:05:04Z</dc:date>
      <dc:date>2024-01-02T10:05:04Z</dc:date>
      <dc:date>2020</dc:date>
      <dc:type>journal article</dc:type>
      <dc:identifier>https://hdl.handle.net/10481/86467</dc:identifier>
      <dc:identifier>https://doi.org/10.1088/1361-6463/ab85e5</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:rights>http://creativecommons.org/licenses/by-nc-nd/3.0/</dc:rights>
      <dc:rights>open access</dc:rights>
      <dc:rights>Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License</dc:rights>
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