General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams Moreno Pérez, Juan Antonio Ruiz García, Isidoro Anguiano Millán, Marta Carvajal Rodríguez, Miguel Ángel General purpose MOSFET Proton beams Dosimetry This research has been partially funded by Junta de Andalucía (Spain), project numbers PI-0505-2017 FEDER/Junta de Andalucía-Consejería de Economía y Conocimiento Project B-TIC-468- UGR18; Ministerio de Ciencia e Innovación, Proyecto del Plan Nacional I + D: PID2019-104888 GB-I00 and Proyectos I + D + i Junta de Andalucía 2018: P18-RT-3237. This work has been also conducted in the framework of European Union H2020 ELICSIR project (grant No. 857558). A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been character- ized as a low-energy proton beam dosimeter. The top of the samples’ housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accelerator Centre (Seville, Spain). During irradiations, the transistors were biased to improve the sensitivity, and the silicon temperature was monitored activating the parasitic diode of the MOSFET. Bias voltages of 0, 1, 5, and 10 V were applied to four sets of three transistors, obtaining an averaged sensitivity that was linearly dependent on this voltage. In addition, the short-fading effect was studied, and the uncertainty of this effect was obtained. The bias voltage that provided an acceptable sensitivity, (11.4 ± 0.9) mV/Gy, minimizing the uncertainty due to the fading effect (−0.09 ± 0.11) Gy was 1 V for a total absorbed dose of 40 Gy. Therefore, this off-the-shelf electronic device presents promising characteristics as a dosimeter sensor for proton beams. 2023-06-12T11:56:24Z 2023-06-12T11:56:24Z 2023-04-06 journal article Moreno-Pérez, J.A.; Ruiz-García, I.; Martín-Holgado, P.; Romero-Maestre, A.; Anguiano, M.; Vila, R.; Carvajal, M.A. General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams. Sensors 2023, 23, 3771. [https://doi.org/10.3390/s23073771] https://hdl.handle.net/10481/82370 10.3390/s23073771 eng info:eu-repo/grantAgreement/EC/H2020/857558 http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional MDPI