Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories Aguilera Pedregosa, Cristina Maldonado Correa, David Jiménez Molinos, Francisco Roldán Aranda, Juan Bautista Resistive switching memory RRAM Temperature characterization Simulation Variability Modeling Kinetic Monte Carlo Series resistance A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These temperature values can be used to improve compact models for circuit simulation purposes 2023-05-23T08:49:19Z 2023-05-23T08:49:19Z 2023-03-10 journal article Aguilera-Pedregosa, C.; Maldonado, D.; González, M.B.; Moreno, E.; Jiménez-Molinos, F.; Campabadal, F.; Roldán, J.B. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories. Micromachines 2023, 14, 630. [https://doi.org/10.3390/mi14030630] https://hdl.handle.net/10481/81740 10.3390/mi14030630 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional MDPI