3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology Navarro Moral, Carlos Donetti, Luca Padilla De la Torre, José Luis Medina Bailón, Cristina Galdón Gil, José Carlos Márquez González, Carlos Sampedro Matarín, Carlos Gámiz Pérez, Francisco Jesús Ambipolar Barrier FDSOI Polarity Reconfigurable Reprogrammable RFET Schottky Through 3D-TCAD simulations this work aims to demonstrate the benefits of Reconfigurable FETs based on dual doping with respect to the Schottky junctions counterparts using the 28 nm FDSOI platform. These devices feature both N and P dopant species at source and drain to allow for electron and hole symmetrical currents instead of using mid-gap metallic regions. Quasi-static results reveals much larger currents thanks to the enhanced carrier injection with analogous capacitances, leading to faster logic circuits in mixed-mode simulations. Dynamic results also show lower energy-delay products making these devices more efficient and appealing to implement reprogrammable logic. 2023-03-28T12:38:51Z 2023-03-28T12:38:51Z 2023-02 journal article C. Navarro et al. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology. Solid-State Electronics 200 (2023) 108577 [https://doi.org/10.1016/j.sse.2022.108577] https://hdl.handle.net/10481/80909 10.1016/j.sse.2022.108577 eng European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 895322 Projects PID2020-119668GB-I00 info:eu-repo/grantAgreement/EC/H2020/895322 http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional