A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices Maldonado Correa, David Belov, Alexey I. Koryazhkina, Maria N. Jiménez Molinos, Francisco Mikhaylov, Alexey N. Roldán Aranda, Juan Bautista Memristors Resistive switching Resistive random access memory Tantalum oxide Variabilities Yttria-stabilized zirconia The authors acknowledge the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, B-TIC-624-UGR20, and IE2017-5414. Support from the Government of the Russian Federation under Megagrant Program (agreement no. 074-02-2018-330 (2)) and the Ministry of Science and Higher Education of the Russian Federation under “Priority-2030” Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod (N-466-99_2021- 2023) is also acknowledged. Memristive devices were designed in the frame of the scientific program of the National Center for Physics and Mathematics (project “Artificial intelligence and big data in technical, industrial, natural and social systems”). Variability is an inherent property of memristive devices based on the switching of resistance in a simple metal–oxide–metal structure compatible with the standard complementary metal–oxide–semiconductor fabrication process. For each specific structure, the variability should be measured and assessed as both the negative and positive factors for different applications of memristive devices. In this report, it is shown how this variability can be extracted and analyzed for such main parameters of resistive switching as the set and reset voltages/cur- rents and how it depends on the methodology used and experimental conditions. The obtained results should be taken into account in the design and predictive simulation of memristive devices and circuits. 2022-11-04T08:49:20Z 2022-11-04T08:49:20Z 2022-11 journal article Maldonado Correa, David. et. al. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices. Phys. Status Solidi A 2022, 2200520 [DOI: 10.1002/pssa.202200520] https://hdl.handle.net/10481/77741 10.1002/pssa.202200520 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional Wiley-VCH GmbH