Performance of FDSOI double-gate dual-doped reconfigurable FETs Navarro Moral, Carlos Donetti, Luca Padilla De la Torre, José Luis Medina Bailón, Cristina Ávila Gómez, Jorge Pablo Galdón Gil, José Carlos Recio Muñoz, María Isabel Márquez González, Carlos Sampedro Matarín, Carlos Gámiz Pérez, Francisco Jesús Reconfigurable Reprogrammable Schottky Barrier FET RFET In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/ drain and only two top gates is investigated through advanced 3D TCAD simulations. The static and dynamic operations are evaluated and compared with those of traditional Schottky barrier RFETs and standard 28 nm FDSOI MOS transistors under manufacturable geometries. 2022-06-27T11:38:03Z 2022-06-27T11:38:03Z 2022-04-21 info:eu-repo/semantics/article C. Navarro... [et al.]. Performance of FDSOI double-gate dual-doped reconfigurable FETs, Solid-State Electronics, Volume 194, 2022, 108336, ISSN 0038-1101, [https://doi.org/10.1016/j.sse.2022.108336] http://hdl.handle.net/10481/75684 10.1016/j.sse.2022.108336 eng http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess Atribución-NoComercial-SinDerivadas 3.0 España Elsevier