Commercial P-Channel Power VDMOSFET as X-ray Dosimeter Ristic, Goran S. Palma López, Alberto José VDMOSFETs X-ray Irradiation Sensitivity Fading This research was funded by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science, and Technological Development of the Republic of Serbia under the project No. 43011. The possibility of using commercial p-channel power vertical double-diffused metal-oxidesemiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered. 2022-04-25T06:35:43Z 2022-04-25T06:35:43Z 2022-03-16 journal article Ristic, G.S... [et al.]. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. Electronics 2022, 11, 918. [https://doi.org/10.3390/electronics11060918] http://hdl.handle.net/10481/74498 10.3390/electronics11060918 eng info:eu-repo/grantAgreement/EC/H2020/857558 http://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España MDPI