A Review of Sharp-Switching Band-Modulation Devices Cristoloveanu, Sorin Navarro Moral, Carlos Gámiz Pérez, Francisco Jesús Nanoelectronics SOI FDSOI Electrostatic doping Band modulation Sharp switching Ultrathin body Memory ESD Sensors Reconfigurable device Esaki diode The European authors are grateful for support from the EU project REMINDER (H2020-687931). Alexander Zaslavsky acknowledges the support of the U.S. National Science Foundation (award QII-TACS-1936221). This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation. 2022-02-01T07:47:58Z 2022-02-01T07:47:58Z 2021-12-11 journal article Cristoloveanu, S... [et al.]. A Review of Sharp-Switching Band-Modulation Devices. Micromachines 2021, 12, 1540. [https://doi.org/10.3390/mi12121540] http://hdl.handle.net/10481/72575 10.3390/mi12121540 eng info:eu-repo/grantAgreement/EC/H2020/687931 http://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España MDPI