Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories Maldonado Correa, David Aguirre, F. González Cordero, Gerardo Roldán Aranda, Andrés María González, M. B. Jiménez Molinos, Francisco Campabadal, F. Miranda, E. Roldán Aranda, Juan Bautista The authors thank the support of the Spanish Ministry of Science, Innovation and Universities and the FEDER program through Project Nos. TEC2017-84321-C4-1-R, TEC2017-84321C4-3-R, and TEC2017-84321-C4-4-R and Project Nos. A.TIC.117.UGR18 and IE2017-5414 funded by the Consejeria de Conocimiento, Investigacion y Universidad, Junta de Andalucia (Spain) and the FEDER program. The authors also thank the support of the University of Granada, Spain, under project for young researchers PPJIB2020-01. The relevance of the intrinsic series resistance effect in the context of resistive random access memory (RRAM) compact modeling is investigated. This resistance notably affects the conduction characteristic of resistive switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting the so-called snapback and snapforward effects. A thorough description of the resistance value extraction procedure and an analysis of the connection of this value with the set and reset transition voltages in HfO2-based valence change memories are presented. Furthermore, in order to illustrate the importance of this feature in the shape of the I–V curve, the Stanford model for RRAM devices is enhanced by incorporating the series resistance as an additional parameter in the Verilog-A model script. 2022-01-31T12:17:02Z 2022-01-31T12:17:02Z 2021-08-06 journal article D. Maldonado, F. Aguirre, G. González-Cordero, A. M. Roldán, M. B. González, F. Jiménez-Molinos, F. Campabadal, E. Miranda, and J. B. Roldán , "Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories", Journal of Applied Physics 130, 054503 (2021) [https://doi.org/10.1063/5.0055982] http://hdl.handle.net/10481/72562 10.1063/5.0055982 eng http://creativecommons.org/licenses/by-nc-nd/3.0/es/ embargoed access Atribución-NoComercial-SinDerivadas 3.0 España AIP Publishing