Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices Medina Bailón, Cristina Padilla De la Torre, José Luis Sadi, Toufik Sampedro Matarín, Carlos Godoy Medina, Andrés Donetti, Luca Georgiev, Vihar Gámiz Pérez, Francisco Jesús Asenov, Asen direct Source-to-Drain tunneling gate leakage current band-to-band tunneling Multi-Subband Ensemble Monte Carlo FDSOI DGSOI FinFET Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, therefore advanced device simulators need to include them in an appropriate way. This work presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and non-local band–to–band tunneling (BTBT) phenomena in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled FDSOI, DGSOI, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths. 2021-06-30T10:10:18Z 2021-06-30T10:10:18Z 2019-01 info:eu-repo/semantics/article C. Medina-Bailon et al., "Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1145-1152, March 2019, doi: 10.1109/TED.2019.2890985. http://hdl.handle.net/10481/69443 10.1109/TED.2019.2890985 eng Print ISSN;0018-9383 http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License Institute of Electrical and Electronics Engineers (IEEE)