Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs Medina Bailón, Cristina Padilla De la Torre, José Luis Sampedro Matarín, Carlos Alper, C Gámiz Pérez, Francisco Jesús Ionescu, Adrian Mihai tunnel field-effect transistors TFET quantum confinement band-to-band tunneling BTBT Multi-Subband Ensemble Monte Carlo MS-EMC TFETs are in the way to become an alternative to conventional MOSFETs due to the possibility of achieving low subthreshold swing (SS) combined with small OFF current levels which allows operation at low VDD. In this work, a non-local band–to–band tunneling (BTBT) model has been successfully implemented into a Multi-Subband Ensemble Monte Carlo (MSEMC) simulator and applied to ultra-scaled silicon-based n-type TFETs. We have considered two different criteria for the choice of the tunneling path followed by the carriers when crossing the potential barrier, which leads to different distributions of the generated electron-hole pairs. Subband discretization due to field–induced quantum confinement has been taken into account. TCAD simulations accounting for quantization effects are considered for comparison purposes providing very accurate agreement with MS-EMC results. 2021-06-30T09:30:12Z 2021-06-30T09:30:12Z 2017-06 journal article C. Medina-Bailón, J. L. Padilla, C. Sampedro, C. Alper, F. Gámiz and A. M. Ionescu, "Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs," in IEEE Transactions on Electron Devices, vol. 64, no. 8, pp. 3084-3091, Aug. 2017, doi: 10.1109/TED.2017.2715403. http://hdl.handle.net/10481/69440 10.1109/TED.2017.2715403 eng Print ISSN;0018-9383 http://creativecommons.org/licenses/by-nc-nd/3.0/ open access Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License Institute of Electrical and Electronics Engineers (IEEE)