Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator Medina Bailón, Cristina Sadi, T. Sampedro Matarín, Carlos Padilla García, José Luis Donetti, Luca Georgiev, Vihar Gámiz Pérez, Francisco Jesús Asenov, Asen Gate leakage mechanism Direct tunneling Trap assisted tunneling From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled transistors leads to the possibility for the charge carriers in the channel to tunnel through the gate oxide via various gate leakage mechanisms (GLMs). In this work, we study the impact of trap number on gate leakage using the GLM model, which is included in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator for Fully-Depleted Silicon-On-Insulator (FDSOI) field effect transistors (FETs). The GLM code described herein considers both direct and trap-assisted tunneling. This work shows that trap attributes and dynamics can modify the device electrostatic characteristics and even play a significant role in determining the extent of GLMs. 2020-05-12T11:50:13Z 2020-05-12T11:50:13Z 2019 info:eu-repo/semantics/article Medina Bailon, C., Sadi, T., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2019) Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. Lecture Notes in Computer Science, 11189, pp. 273- 280 http://hdl.handle.net/10481/61980 10.1007/978-3-030-10692-8_30 eng info:eu-repo/grantAgreement/EC/FP7/688101 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess Atribución-NoComercial-SinDerivadas 3.0 España Springer Nature