GFET Asymmetric Transfer Response Analysis through Access Region Resistances Toral López, Alejandro González Marín, Enrique Pasadas, Francisco González-Medina, Jose María Ruiz, Francisco G. Jiménez, David Godoy Medina, Andrés Access region GFET Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. Here, we analyse in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i.e., by the influence of a back gate) and the presence of imperfections in the graphene layer (e.g., charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by evaluating their cut-off frequency. 2020-04-27T11:42:13Z 2020-04-27T11:42:13Z 2019-07-18 journal article Toral-Lopez, A., Marin, E. G., Pasadas, F., Gonzalez-Medina, J. M., Ruiz, F. G., Jiménez, D., & Godoy, A. (2019). GFET Asymmetric Transfer Response Analysis through Access Region Resistances. Nanomaterials, 9(7), 1027. http://hdl.handle.net/10481/61613 10.3390/nano9071027 eng info:eu-repo/grantAgreement/EC/FP7/785219 http://creativecommons.org/licenses/by/3.0/es/ open access Atribución 3.0 España MDPI