Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances Pasadas, Francisco González Marín, Enrique Toral López, Alejandro García Ruiz, Francisco Javier Godoy Medina, Andrés We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs. 2020-01-15T08:48:52Z 2020-01-15T08:48:52Z 2019-12-04 info:eu-repo/semantics/article Pasadas, F., Marin, E. G., Toral-Lopez, A., Ruiz, F. G., Godoy, A., Park, S., ... & Jiménez, D. (2019). Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances. npj 2D Materials and Applications, 3(1), 1-7. http://hdl.handle.net/10481/58755 10.1038/s41699-019-0130-6 eng http://creativecommons.org/licenses/by/3.0/es/ info:eu-repo/semantics/openAccess Atribución 3.0 España Springer Nature