Experimental Demonstration of Operational Z2-FET Memory Matrix Navarro Moral, Santiago Navarro Moral, Carlos Márquez González, Carlos El Dirani, Hassam Galy, Philippe Bawedin, Maryline Pickering, Andy Cristoloveanu, Sorin Gámiz Pérez, Francisco Jesús 1T-DRAM Matrix Z2-FET Capacitorless Fully depleted (FD) In this letter, a functional Z2-FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furthermore, the fabricated memory matrix, which includes only one selector per word-line, facilitates the scalability of the memory for increasing array dimensions. 2019-10-21T08:09:52Z 2019-10-21T08:09:52Z 2018-03-26 info:eu-repo/semantics/article http://hdl.handle.net/10481/57444 10.1109/LED.2018.2819801 eng Grant agreement No 687931 http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License