Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs Donetti, Luca Sampedro Matarín, Carlos García Ruiz, Francisco Javier Godoy Medina, Andrés Gámiz Pérez, Francisco Jesús Gate-all-around MOSFET Nanowire Monte Carlo simulation Multi-subband Short-channel effects We developed a Multi-Subband Ensemble Monte Carlo simulator for non-planar devices, taking into account two-dimensional quantum confinement. It couples self-consistently the solution of the 3D Poisson equation, the 2D Schrödinger equation, and the 1D Boltzmann transport equation with the Ensemble Monte Carlo method. This simulator was employed to study MOS devices based on ultra-scaled Gate-All-Around Si nanowires with diameters in the range from 4 nm to 8 nm with gate length from 8 nm to 14 nm. We studied the output and transfer characteristics, interpreting the behavior in the sub-threshold region and in the ON state in terms of the spatial charge distribution and the mobility computed with the same simulator. We analyzed the results, highlighting the contribution of different valleys and subbands and the effect of the gate bias on the energy and velocity profiles. Finally the scaling behavior was studied, showing that only the devices with D = 4 nm maintain a good control of the short channel effects down to the gate length of 8 nm . 2019-07-23T08:56:54Z 2019-07-23T08:56:54Z 2018-05 journal article Donetti, L. [et al.] Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs. Solid State Electronics 143 (2018) 49–5 [Preprint] [doi:10.1016/j.sse.2018.02.004] http://hdl.handle.net/10481/56502 10.1016/j.sse.2018.02.004 eng http://creativecommons.org/licenses/by-nc-nd/3.0/es/ embargoed access Atribución-NoComercial-SinDerivadas 3.0 España Elsevier