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      <dc:title>Calculation of the Ballistic Current of Few-Layer MoS2 Field-Effect Transistors</dc:title>
      <dc:creator>García Ruiz, Francisco Javier</dc:creator>
      <dc:creator>Biel, Blanca</dc:creator>
      <dc:creator>González-Medina, Jose María</dc:creator>
      <dc:creator>Toral López, Alejandro</dc:creator>
      <dc:creator>González Marín, Enrique</dc:creator>
      <dc:creator>Tienda-Luna, Isabel María</dc:creator>
      <dc:creator>Godoy Medina, Andrés</dc:creator>
      <dc:subject>MOSFET</dc:subject>
      <dc:subject>Ballistic Transport</dc:subject>
      <dc:subject>MoS2</dc:subject>
      <dc:date>2019-05-08T09:42:19Z</dc:date>
      <dc:date>2019-05-08T09:42:19Z</dc:date>
      <dc:date>2015</dc:date>
      <dc:type>conference output</dc:type>
      <dc:identifier>http://hdl.handle.net/10481/55659</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:rights>http://creativecommons.org/licenses/by-nc-nd/3.0/es/</dc:rights>
      <dc:rights>open access</dc:rights>
      <dc:rights>Atribución-NoComercial-SinDerivadas 3.0 España</dc:rights>
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