Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs Padilla De la Torre, José Luis Gámiz Pérez, Francisco Jesús Godoy Medina, Andrés Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores Transistores MOSFET Nanoelectrónica Métodos de simulación Emisión termoiónica Transductores Tunnel FETs ATLAS simulator The aim of the work herein presented in this thesis is to deepen the simulation study of devices based of new injection mechanisms, which are currently regarded as potentially interesting to replace conventional MOSFETs and overcome their fundamental subthreshold swing limitation of 60mV/dec. The physical impossibility of breaking this limit fosters most of the ongoing research precisely in the direction of exploring novel devices such as those considered in this work: the Tunneling Field–Effect Transistors (TFETs) and the Schottky Barrier MOSFETs (SB–MOSFETs). 2016-11-24T09:27:51Z 2016-11-24T09:27:51Z 2016 2012-10-26 doctoral thesis Padilla, J.L. Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs. Granada: Universidad de Granada, 2016. [http://hdl.handle.net/10481/43553] 9788491258261 http://hdl.handle.net/10481/43553 eng http://creativecommons.org/licenses/by-nc-nd/3.0/ open access Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License Universidad de Granada