Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires González Marín, Enrique García Ruiz, Francisco Javier Tienda-Luna, Isabel María Godoy Medina, Andrés Gámiz Pérez, Francisco Jesús III-V compound semiconductors Non-parabolic relationship Nanowire Density of states Gate capacitance In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets. 2014-09-08T09:37:22Z 2014-09-08T09:37:22Z 2012-05 info:eu-repo/semantics/conferenceObject González-Marín, E.; et al. Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires. In: 36 th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012). Island of Porquerolles (France), 28-30 may 2012. [http://hdl.handle.net/10481/32936] http://hdl.handle.net/10481/32936 eng info:eu-repo/semantics/openAccess