Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires Tienda-Luna, Isabel María García Ruiz, Francisco Javier Godoy Medina, Andrés González Marín, Enrique Gámiz Pérez, Francisco Jesús Mobility Nanowire Phonon Silicon The study of the transport properties of Si-Nanowires (NWs) is a research field of high interest. The spatial dependence of the low-field mobility and, in particular, the role of the corners is still not clear. Only recently, Lee et al. have considered their impact on the mobility through the development of a Spatial Dependent Mobility (SDM) expression. In this work, we extend their approach to study the phonon-limited mobility (μph ) of arbitrarily oriented square NWs. 2014-09-08T09:18:13Z 2014-09-08T09:18:13Z 2012-05 info:eu-repo/semantics/conferenceObject Tienda-Luna, I.M.; et al. Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires. In: 15th International Workshop on Computational Electronics (IWCE 2012). University of Winsconsin (Madison, USA), may 22-25, 2012. [http://hdl.handle.net/10481/32935] http://hdl.handle.net/10481/32935 eng info:eu-repo/semantics/openAccess