On the Capacitance of Nanosheet Transistors Donetti, Luca Medina Bailón, Cristina Padilla De la Torre, José Luis Sampedro Matarín, Carlos Gámiz Pérez, Francisco Jesús Equivalent oxide thickness (EOT) gate insulator capacitance gate-all-around (GAA) MOSFET nanosheet MOSFET The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula. While its use is appropriate for planar devices, it has been naturally extended to 3-D devices such as those based on nanosheets even if the geometry is quite different. In this work, we compute numerically the gate oxide capacitance of nanosheet transistors and, observing a nonnegligible discrepancy with the planar model, we propose a simple model that better reproduces the computed capacitance. Then, we investigate the definition of equivalent oxide thickness (EOT), showing that it cannot be strictly used for nonplanar devices: however, our improved model allows us to obtain a useful expression valid for the most common cases. Finally, we generalize the capacitance model to nanosheets with rounded corners. 2026-01-26T09:23:56Z 2026-01-26T09:23:56Z 2025 journal article IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 72, NO. 6, P. 2727 https://hdl.handle.net/10481/110243 10.1109/TED.2025.3559482 spa http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional