Variability in HfO2-based memristors under pulse operation Maldonado Correa, David Acal González, Christian José Ortiz Alcalá, Helena Navas Gómez, Fernando Jesús Cantudo Gómez, Antonio Manuel Wenger, C. Pérez, E. Roldán Aranda, Juan Bautista Resistive switching memory Variability Distribution function We have studied device-to-device variability in TiN/Ti/HfO2/TiN devices under pulse operation. We measured extensively memristive devices that are CMOS integrated with different pulse trains, changing the pulse width and amplitude for groups of more than one hundred devices. The statistical parameters of the measured current were extracted to better understand the device physics under the pulse operation regime. An analytical model to describe synaptic depression and potentiation behavior in the device conductance is introduced, it fits accurately the means of the current data for all the pulse trains under study. In addition, an explanation of the measurements is enlightened with kinetic Monte Carlo simulations that allow the study of resistive switching at the atomic level. Finally, the probability distribution functions of the measured currents in some of the pulses within the pulse series employed are analyzed to extract the probability distribution that works better. A proposal for the implementation of device-to-device variability in the Stanford models is introduced. 2026-01-22T10:02:48Z 2026-01-22T10:02:48Z 2026-06-01 journal article D. Maldonado, C. Acal, H. Ortiz, F. Navas-Gomez, A. Cantudo, C. Wenger, E. Pérez, J.B. Roldán, Variability in HfO2-based memristors under pulse operation, Microelectronic Engineering, Volume 304, 2026, 112445, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2026.112445. https://hdl.handle.net/10481/110082 10.1016/j.mee.2026.112445. eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Elsevier