On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices Márquez González, Carlos Gity, Farzan Galdón Gil, José Carlos Martinez Garcia, Alberto Salazar, Norberto Ansari, Lida Hazel, Neil Donetti, Luca Lorenzo Lazaro, Francisco Caño-García, Manuel Ortega López, Rubén Navarro Moral, Carlos Sampedro Matarín, Carlos Hurley, Paul Gámiz Pérez, Francisco Jesús In this work, a scalable technique is presented for the direct growth of tungsten disulfide (WS2) utilized in back-gated field-effect transistors (FETs), demonstrating robust and persistent p-type behavior across diverse conditions. Notably, this p-type behavior is consistently observed regardless of the metal contacts, semiconductor thickness, or ambient conditions, and remains stable even after high-vacuum and high-temperature annealing. Electrical characterization reveals negligible Fermi-level pinning at the conduction band edge, with minimal Schottky barrier heights for hole carriers below 180 mV and a well-defined thermionic transport regime. The devices exhibit field-effect mobilities with a clear back-gate dependence, reaching values up to 0.1 cm2V−1s−1. Temperature-dependent transport analysis indicates that charge carrier mobility is predominantly limited by impurity scattering and Coulomb interactions. First-principles simulations corroborate that the persistent p-type behavior could be driven by the presence of tungsten vacancies or WO3 oxide species. This study highlights the potential of WS2 for scalable integration into advanced p-type electronic devices and provides critical insights into the intrinsic mechanisms governing its charge transport properties. 2025-10-27T09:42:50Z 2025-10-27T09:42:50Z 2025-04-25 journal article C. Marquez, F. Gity, J. C. Galdon, et al. “ On the Enhanced p-Type Performance of Back-Gated WS2 Devices.” Adv. Electron. Mater. 11, no. 13 (2025): 11, 2500079. https://doi.org/10.1002/aelm.202500079 https://hdl.handle.net/10481/107467 10.1002/aelm.202500079 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional