Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS2 Devices Enabled by Plasma-Enhanced Atomic Layer Deposition Martínez, Alberto Márquez González, Carlos Lorenzo Lazaro, Francisco Gutierrez Parejo, Francisco Caño-García, Manuel Ávila Gómez, Jorge Pablo Galdón Gil, José Carlos Ortega López, Rubén Navarro Moral, Carlos Donetti, Luca Gámiz Pérez, Francisco Jesús The relentless scaling of semiconductor technology demands materials beyond silicon to sustain performance improvements. Transition metal dichalcogenides (TMDs), particularly MoS2, offer excellent electronic properties; however, achieving scalable and CMOS-compatible fabrication remains a critical challenge. Here, we demonstrate a scalable and BEOL-compatible approach for the direct wafer-scale growth of MoS2 devices using plasma-enhanced atomic layer deposition (PE-ALD) at temperatures below 450 °C, fully compliant with CMOS thermal budgets. This method enables the fabrication of MoS2-based devices directly on target substrates, eliminating material transfer while ensuring robust adhesion and integration with semiconductor processing. The resulting field-effect transistors (FETs) exhibit stable ambipolar behavior, consistent across semiconductor thickness variations and environmental conditions. Electrical characterization reveals minimal Fermi-level pinning, with Schottky barrier heights below 120 meV for both carriers, supporting a well-defined thermionic transport regime. Low-frequency noise measurements confirm flicker noise characteristics, typical of planar field-effect devices. Material conductivity is significantly enhanced through in situ, BEOL-compatible dielectric passivation or sulfur-atmosphere annealing. This work highlights the potential to directly fabricate, lithographically pattern, and encapsulate MoS2 devices for three-dimensional (3D) integration, fully compliant with silicon CMOS thermal constraints. 2025-10-27T09:28:47Z 2025-10-27T09:28:47Z 2025-09 journal article Alberto Martínez, Carlos Márquez, Francisco Lorenzo, Francisco Gutiérrez, Manuel Caño-García, Jorge Ávila, José Carlos Galdón Gil, Ruben Ortega Lopez, Carlos Navarro, Luca Donetti, and Francisco Gámiz ACS Applied Materials & Interfaces 2025 17 (37), 52902-52912 DOI: 10.1021/acsami.5c12014 https://hdl.handle.net/10481/107465 10.1021/acsami.5c12014 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional American Chemical Society