Tuning Electromagnetically Induced Transparency in a Double GaAs/AlGaAs Quantum Well with Modulated Doping Dagua-Conda, C. A. Gil-Corrales, J. A. Herrero Hahn, Rebeca Victoria Restrepo, R. L. Mora Ramos, M. E. Morales, A. L. Duque, C. A. Asymmetric double quantum well system N-doped layer Optical properties Including an n-doped layer in asymmetric double quantum wells restricts confined carriers into V-shaped potential profiles, forming discrete conduction subbands and enabling intersubband transitions. Most studies on doped semiconductor heterostructures focus on how external fields and structural parameters dictate optical absorption. However, electromagnetically induced transparency remains largely unexplored. Here, we show that the effect of an n-doped layer GaAs/AlxGa1−xAs in an asymmetric double quantum well system is quite sensitive to the width and position of the doped layer. By self-consistently solving the Poisson and Schrödinger’s equations, we determine the electronic structure using the finite element method within the effective mass approximation. We found that the characteristics of the n-doped layer can modulate the resonance frequencies involved in the electromagnetically induced transparency phenomenon. Our results demonstrate that an n-doped layer can control the electromagnetically induced transparency effect, potentially enhancing its applications in optoelectronic devices. 2025-04-07T08:50:23Z 2025-04-07T08:50:23Z 2025-03-06 journal article Dagua-Conda, C.A.; Gil-Corrales, J.A.; Hahn, R.V.H.; Restrepo, R.L.; Mora-Ramos, M.E.; Morales, A.L.; Duque, C.A. Tuning Electromagnetically Induced Transparency in a Double GaAs/ AlGaAs QuantumWell with Modulated Doping. Crystals 2025, 15, 248. [https://doi.org/10.3390/cryst15030248] https://hdl.handle.net/10481/103484 10.3390/cryst15030248 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional MDPI