A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs Ganeriwala, Mohit Singh, Aishwarya Dubey, Abhilash Kaur, Ramandeep Mohapatra, Nihar Bottom-upapproach compactmodel constant charge density approximation (CCDA) density of states (DOS) gate-all-around (GAA) FET nanosheet FETs (NsFETs) nanowires quantum mechanical confinement In this work, a physics-based compact model for channel charges and drain current in nanosheet FETs is presented. The model follows the bottom-up approach. The channel charges are calculated using the 1-D density of states (DOS), which seamlessly scales up for devices with 2-D or 3-D DOS as the confinement reduces in a particular direction. The model uses full Fermi–Dirac (FD) statistics and requires only two additional fitting parameters. The accuracy of the model is confirmed by comparing it with data from in-house 2-D coupled Poisson–Schrödinger (PS) solver and Technology Computer Aided Tool (TCAD) simulations. The proposed model accurately predicts the subband energies, inversion charges, channel potential, and drain current for nanosheet FETs (NsFETs) with different dimensions and applied biases. 2025-04-02T10:19:01Z 2025-04-02T10:19:01Z 2021-12-07 journal article https://hdl.handle.net/10481/103403 10.1109/TED.2021.3130015 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional