Simulation of transmission electron microscopy images using a generalized single-slice approach: The case of self-assembled quantum dots Cervera Gontard, Lionel Pizarro, Joaquín Ruiz-Zafra, Ángel Hernández-Saz, Jesús Lionel C Gontard wants to acknowledge funding from Ministerio de Ciencia, Innovación y Universidades/ Agencia Estatal de Investigación (MCIU/AEI) of Spain through projects PGC2018-101538-A-I00. The authors thank the Spanish Ministry of Economy and Competitiveness (project no. TEC2017-86102-C2-2-R) and FEDER Andalusian Operative Program for SOL-201800106586-TRA. Financial support from the program Acceso al Sistema Español de Ciencia y Tecnología (ASECTI) is also acknowledged. Tools for numerical simulation of transmission electron microscopy (TEM) images are frequently used to provide insight about the origin of contrast features, hence, to understand and to measure correctly the properties of a material. We describe in this work a methodology for simulating the compositional-strain contrast of TEM images of large nanocrystalline heterostructures. The methodology combines finite element calculations and a generalized form of the single slice approach that takes into account also the imaging conditions. It is simple and computationally efficient and as an example of its reliability we compare experimental and simulated images of a sample of self-assembled In(Ga)As/GaAs QDs. 2025-01-31T10:04:03Z 2025-01-31T10:04:03Z 2020-04-13 journal article L.C. Gontard, et al. Materials Characterization 164 (2020) 110312. https://doi.org/10.1016/j.matchar.2020.110312 https://hdl.handle.net/10481/101585 10.1016/j.matchar.2020.110312 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional Elsevier