Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities Padilla De la Torre, José Luis Medina Bailón, Cristina Navarro Moral, Carlos Alper, C Gámiz Pérez, Francisco Jesús Ionescu, Adrian Mihai heterogate electron–hole bilayer TFET quantum confinement band-to-band tunneling occupancy probabilities steep slope transistors Within the research in bilayer tunneling field-effect transistors (TFETs) exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, simulation results for the heterogate electron-hole bilayer TFET (HG-EHBTFET) showed that this type of devices succeeded in suppressing the parasitic tunneling leakage currents appearing in EHBTFETs as a result of the variable quantization strength inside the channel. In this paper, and conversely to standard approaches with entirely intrinsic channels, we investigate the possibility of modulating the band-to-band tunneling (BTBT) distance by acting on the subband discretization profiles through partially doped channels. We also analyze the impact of this pocket doping inside the channel on the occupancy probabilities involved in the BTBT processes in a germanium HG-EHBTFET. 2025-01-28T10:34:49Z 2025-01-28T10:34:49Z 2017-12-06 journal article Padilla, J. L., Medina-Bailon, C., Navarro, C., Alper, C., Gamiz, F., & Ionescu, A. M. (2017). Analysis of the heterogate electron–hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities. IEEE Transactions on Electron Devices, 65(1), 339-346. https://hdl.handle.net/10481/100706 10.1109/TED.2017.2777666 eng http://creativecommons.org/licenses/by-nc-nd/4.0/ open access Attribution-NonCommercial-NoDerivatives 4.0 Internacional Institute of Electrical and Electronics Engineers (IEEE)