dc.contributor.author | Acal González, Christian José | |
dc.contributor.author | Maldonado Correa, David | |
dc.contributor.author | Cantudo Gómez, Antonio | |
dc.contributor.author | Bargallo González, Mireia | |
dc.contributor.author | Jiménez Molinos, Francisco | |
dc.contributor.author | Campabadal, F. | |
dc.contributor.author | Roldán, J. B. | |
dc.date.accessioned | 2024-07-19T09:18:43Z | |
dc.date.available | 2024-07-19T09:18:43Z | |
dc.date.issued | 2024-05-07 | |
dc.identifier.citation | Acal, C. et. al. Nanoscale, 2024, 16, 10812–10818. [https://doi.org/10.1039/D4NR01237B] | es_ES |
dc.identifier.uri | https://hdl.handle.net/10481/93250 | |
dc.description.abstract | A new statistical analysis is presented to assess cycle-to-cycle variability in resistive memories. This method employs two-dimensional (2D) distributions of parameters to analyse both set and reset voltages and currents, coupled with a 2D coefficient of variation (CV). This 2D methodology significantly enhances the analysis, providing a more thorough and comprehensive understanding of the data compared to conventional one-dimensional methods. Resistive switching (RS) data from two different technologies based on hafnium oxide are used in the variability study. The 2D CV allows a more compact assessment of technology suitability for applications such as non-volatile memories, neuromorphic computing and random number generation circuits. | es_ES |
dc.description.sponsorship | Projects PID2022-139586NB-C44,
PID2022-139586NB-C42 and PID2020-113961GB-I00 | es_ES |
dc.description.sponsorship | “María de Maeztu” Excellence Unit IMAG reference CEX2020-
001105-M | es_ES |
dc.description.sponsorship | CSIC funding through project 20225AT012 | es_ES |
dc.description.sponsorship | Generalitat de Catalunya-AGAUR through project 2021 SGR
00497 | es_ES |
dc.description.sponsorship | Project CR32023-
040125 | es_ES |
dc.description.sponsorship | European Union through the NextGenerationEU/PRTR
program. | es_ES |
dc.description.sponsorship | acknowledges the grant RYC2020-030150-I funded by MCIN/AEI/ 10.13039/501100011033 and by “ESF
Investing in your future” | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Royal Society of Chemistry | es_ES |
dc.rights | Atribución-NoComercial 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc/4.0/ | * |
dc.title | Variability in HfO2-based memristors described with a new bidimensional statistical technique | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1039/D4NR01237B | |
dc.type.hasVersion | VoR | es_ES |