Mostrar el registro sencillo del ítem
Low-Frequency Noise in InGaAs-OI Transistors
dc.contributor.author | Márquez González, Carlos | |
dc.contributor.author | Navarro Moral, Carlos | |
dc.contributor.author | Karg, Siegfried | |
dc.contributor.author | Ortega López, Rubén | |
dc.contributor.author | Zota, Cezar | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2024-07-12T09:43:08Z | |
dc.date.available | 2024-07-12T09:43:08Z | |
dc.date.issued | 2024 | |
dc.identifier.citation | Published version: Márquez González, C. et al. Low-Frequency Noise in InGaAs-OI Transistors IEEE Transactions on Electron Devices, Vol. 71, Núm. 6, pp. 3964-3969. https://doi.org/10.1109/TED.2024.3392180 | es_ES |
dc.identifier.uri | https://hdl.handle.net/10481/93093 | |
dc.description | This work has been partially funded by C-ING-357-UGR23 project (supported by the Andalusian University, Investigation and Innovation Council and by the EU FEDER Andalucía 2021-2027) and by the Spanish Projects MCIN/AEI PID2021−128547OB−I00, PID2020−119668GB−100 and MCIN/AEI PLEC2022-009381 with European Union NextGeneration EU/PRTR support. Devices were fabricated under the European Project REMINDER 687931 and C. Marquez was supported by MSCA 895322 TRAPS-2D. | es_ES |
dc.description.abstract | III-V compounds have recently attracted high expectation due to their potential to relieve the semiconductor scaling constraints. Scaled indium gallium arsenide (InGaAs) transistors have recently proved to operate as single transistor DRAM exploiting the floating-body effect, enabling getting rid of the external capacitor and minimizing the cell footprint. However, extensive characterization of the interface quality and disturbing mechanisms affecting the device operation are still required. This work addresses the low frequency noise characterization of these III-V InGaAs transistors focusing on their DRAM operation. The experimentally extracted power spectral density of current follows a flicker-noise characteristic which points to carrier number fluctuations as the main noise source. However, mobility degradation associated to trapping-detrapping carrier phenomena has to be also taken into account to model the device operation. Finally, the device dimension and the back-gate bias dependence on the effective trap density have been evaluated. | es_ES |
dc.description.sponsorship | Andalusian University C-ING-357-UGR23 | es_ES |
dc.description.sponsorship | EU FEDER Andalucía 2021-2027 | es_ES |
dc.description.sponsorship | MCIN/AEI PID2021−128547OB−I00, PID2020−119668GB−100, PLEC2022-009381 | es_ES |
dc.description.sponsorship | European Union NextGeneration EU/PRTR | es_ES |
dc.description.sponsorship | European Project REMINDER 687931 | es_ES |
dc.description.sponsorship | MSCA 895322 TRAPS-2D | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Reliability | es_ES |
dc.subject | Semiconductors | es_ES |
dc.subject | 1T-DRAM | es_ES |
dc.subject | III-V materials | es_ES |
dc.title | Low-Frequency Noise in InGaAs-OI Transistors | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1109/TED.2024.3392180 | |
dc.type.hasVersion | AM | es_ES |
Ficheros en el ítem
Este ítem aparece en la(s) siguiente(s) colección(ones)
-
DETC - Artículos
-
OpenAIRE (Open Access Infrastructure for Research in Europe)
Publicaciones financiadas por Framework Programme 7, Horizonte 2020, Horizonte Europa... del European Research Council de la Unión Europea en el marco del Proyecto OpenAIRE que promueve el acceso abierto a Europa.