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dc.contributor.authorToral López, Alejandro 
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorPasadas Cantos, Francisco 
dc.contributor.authorGaneriwala, Mohit Dineshkumar
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2023-10-27T08:49:24Z
dc.date.available2023-10-27T08:49:24Z
dc.date.issued2023-10-05
dc.identifier.citationToral-Lopez, A., Marin, E.G., Pasadas, F. et al. Reconfigurable frequency multipliers based on graphene field-effect transistors. Discover Nano 18, 123 (2023). [https://doi.org/10.1186/s11671-023-03884-8]es_ES
dc.identifier.urihttps://hdl.handle.net/10481/85298
dc.descriptionThis work is part of the research project P21_00149 ENERGHENE funded by Consejería de Universidad, Investigación e Innovación de la Junta de Andalucía. This work is also supported by FEDER/Junta de Andalucía - Consejería de Transformación Económica, Industria, Conocimiento y Universidades through the projects P20-00633 and A-TIC-646-UGR20, by Spanish Government through projects PID2020-116518GBI00 funded by MCIN/AEI/10.13039/501100011033 and TED2021-129769B-I00 funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR. F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014-2020 no. 20804. M. D. Ganeriwala acknowledges funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 101032701.es_ES
dc.descriptionSupplementary information The online version contains supplementary material available at (https://doi.org/10.1186/s11671-023-03884-8).es_ES
dc.description.abstractRun-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable electronics lies in ambipolarity, which is easily accessible in a substantial number of two-dimensional materials, either by contact engineering or architecture device-level design. In this work, we showcase graphene as an optimal solution to implement high-frequency reconfigurable electronics. We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier. The study is based on a physically based numerical simulator validated and tested against experiments. The proposed architecture is evaluated in terms of its performance as a tunable frequency multiplier, able to switch between doubler, tripler or quadrupler operation modes. Different material and device parameters are analyzed, and their impact is assessed in terms of the reconfigurable graphene frequency multiplier performance.es_ES
dc.description.sponsorshipResearch project P21_00149 ENERGHENE funded by Consejería de Universidad, Investigación e Innovación de la Junta de Andalucíaes_ES
dc.description.sponsorshipFEDER/Junta de Andalucía - Consejería de Transformación Económica, Industria, Conocimiento y Universidades through the projects P20-00633 and A-TIC-646-UGR20es_ES
dc.description.sponsorshipSpanish Government through projects PID2020-116518GBI00es_ES
dc.description.sponsorshipMCIN/AEI/10.13039/501100011033es_ES
dc.description.sponsorshipEuropean Union NextGenerationEU/PRTRes_ES
dc.description.sponsorshipPAIDI 2020 and the European Social Fund Operational Programme 2014-2020 no. 20804.es_ES
dc.description.sponsorshipEuropean Union’s Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 101032701es_ES
dc.language.isoenges_ES
dc.publisherSpringer Naturees_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.subjectGraphenees_ES
dc.subjectSplit gatees_ES
dc.subjectFrequency multiplieres_ES
dc.subjectReconfigurablees_ES
dc.subjectRadio frequency es_ES
dc.subjectHigh frequencyes_ES
dc.subjectField-effect transistores_ES
dc.titleReconfigurable frequency multipliers based on graphene field‑effect transistorses_ES
dc.typejournal articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/101032701es_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1186/s11671-023-03884-8
dc.type.hasVersionVoRes_ES


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