TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
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Maldonado Correa, David; Cantudo Gómez, Antonio; Romero Zaliz, Rocio Celeste; Jiménez Molinos, Francisco; Roldán Aranda, Juan BautistaEditorial
Frontiers
Materia
Resistive switching devices Neuromorphic computing Synaptic behavior Spike-timing-dependent plasticity Stochastic resonance
Date
2023Referencia bibliográfica
Maldonado D, Cantudo A, Perez E, Romero-Zaliz R, Perez-Bosch Quesada E, Mahadevaiah MK, Jimenez-Molinos F, Wenger C and Roldan JB (2023) TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance. Front. Neurosci. 17:1271956. [doi: 10.3389/fnins.2023.1271956]
Sponsorship
Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), and the FEDER program through project B-TIC-624-UGR20; Federal Ministry of Education and Research of Germany under Grant 16ME0092Abstract
We characterize TiN/Ti/HfO2/TiN memristive devices for neuromorphic
computing. We analyze different features that allow the devices to mimic
biological synapses and present the models to reproduce analytically some of
the data measured. In particular, we have measured the spike timing dependent
plasticity behavior in our devices and later on we have modeled it. The spike timing
dependent plasticity model was implemented as the learning rule of a spiking
neural network that was trained to recognize the MNIST dataset. Variability is
implemented and its influence on the network recognition accuracy is considered
accounting for the number of neurons in the network and the number of training
epochs. Finally, stochastic resonance is studied as another synaptic feature. It is
shown that this effect is important and greatly depends on the noise statistical
characteristics.