Mostrar el registro sencillo del ítem
Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient
dc.contributor.author | Acal González, Christian José | |
dc.contributor.author | Maldonado Correa, David | |
dc.contributor.author | Aguilera Del Pino, Ana María | |
dc.contributor.author | Roldán Aranda, Juan Bautista | |
dc.date.accessioned | 2023-05-18T08:25:10Z | |
dc.date.available | 2023-05-18T08:25:10Z | |
dc.date.issued | 2023-04-07 | |
dc.identifier.citation | Acal C. et al. Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient. ACS Appl. Mater. Interfaces 2023, 15, 19102−19110. [https://doi.org/10.1021/acsami.2c22617] | es_ES |
dc.identifier.uri | https://hdl.handle.net/10481/81638 | |
dc.description | The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c22617 | es_ES |
dc.description.abstract | We present a new methodology to quantify the variability of resistive switching memories. Instead of statistically analyzing few data points extracted from current versus voltage (I− V) plots, such as switching voltages or state resistances, we take into account the whole I−V curve measured in each RS cycle. This means going from a one-dimensional data set to a two-dimensional data set, in which every point of each I−V curve measured is included in the variability calculation. We introduce a new coefficient (named two-dimensional variability coefficient, 2DVC) that reveals additional variability information to which traditional one-dimensional analytical methods (such as the coefficient of variation) are blind. This novel approach provides a holistic variability metric for a better understanding of the functioning of resistive switching memories | es_ES |
dc.description.sponsorship | Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) | es_ES |
dc.description.sponsorship | FEDER: B-TIC-624-UGR20, PID2020-113961GB-I00, A-FQM-66-UGR20, FQM-307 | es_ES |
dc.description.sponsorship | IMAG María de Maeztu CEX2020-001105-M/AEI/10.13039/501100011033 | es_ES |
dc.description.sponsorship | King Abdullah University of Science and Technology | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Chemical Society | es_ES |
dc.rights | Atribución 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | * |
dc.subject | Resistive memories | es_ES |
dc.subject | Variability | es_ES |
dc.subject | Variability coefficient | es_ES |
dc.subject | Functional data analysis | es_ES |
dc.subject | Holistic methodology | es_ES |
dc.title | Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1021/acsami.2c22617 | |
dc.type.hasVersion | VoR | es_ES |