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dc.contributor.authorRoldán Aranda, Juan Bautista 
dc.contributor.authorMaldonado Correa, David 
dc.contributor.authorJiménez Molinos, Francisco 
dc.date.accessioned2023-05-15T11:04:54Z
dc.date.available2023-05-15T11:04:54Z
dc.date.issued2023
dc.identifier.citationRoldán J. B. et al. Variability in Resistive Memories. Adv. Intell. Syst. 2023, 2200338. [https://doi.org/10.1002/aisy.202200338]es_ES
dc.identifier.urihttps://hdl.handle.net/10481/81539
dc.descriptionThis research was supported by project B-TIC-624-UGR20 funded by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. F.J.A. acknowledges grant PGC2018-098860-B-I00 and PID2021-128077NB-I00 financed by MCIN/ AEI/10.13039/501100011033/FEDER and A-FQM-66-UGR20 financed by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and the FEDER program. M.B.G. acknowledges the Ramón y Cajal Grant No. RYC2020-030150-I. M.L. and M.A.V. acknowl- edge generous support from the King Abdullah University of Science and Technology. A.N.M., N.V.A., A.A.D., M.N.K. and B.S. acknowledge the Government of the Russian Federation under Megagrant Program (agreement no. 074-02-2018-330 (2)) and the Ministry of Science and Higher Education of the Russian Federation under “Priority-2030” Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod (N-466-99_2021-2023). The authors thank D.O. Filatov, A.S. Novikov, and V.A. Shishmakova for their help in studying the dependence of MFPT on external voltage (Section 4). The devices in Section 4 were designed in the frame of the scientific program of the National Center for Physics and Mathematics (project “Artificial intel- ligence and big data in technical, industrial, natural and social systems”) and fabricated at the facilities of Laboratory of memristor nanoelectronics (state assignment for the creation of new laboratories for electronics industry). E.M. acknowledges the support provided by the European proj- ect MEMQuD, code 20FUN06, which has received funding from the EMPIR programme co-financed by the Participating States and from the European Union’s Horizon 2020 research and innovation programme.es_ES
dc.description.abstractResistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuro- morphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial production. However, the most important hurdle to progress in their development is the so-called cycle-to-cycle variability, which is inherently rooted in the resistive switching mechanism behind the operational principle of these devices. In order to achieve the whole picture, variability must be assessed from different viewpoints going from the experi- mental characterization to the adequation of modeling and simulation techni- ques. Herein, special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers. In this respect, a number of approaches are used to the date: stochastic, behavioral, meso- scopic..., each of them covering particular aspects of the electron and ion transport mechanisms occurring within the switching material. These subjects are dealt with in this review, with the aim of presenting the most recent advancements in the treatment of variability in resistive memories.es_ES
dc.description.sponsorshipJunta de Andalucía B-TIC-624-UGR20 PID2021-128077NB-I00es_ES
dc.description.sponsorshipEuropean Commissiones_ES
dc.description.sponsorshipMCIN/AEI/FEDER A-FQM-66-UGR20 PGC2018-098860-B-I00es_ES
dc.description.sponsorshipSpanish Government RYC2020-030150-Ies_ES
dc.description.sponsorshipKing Abdullah University of Science & Technologyes_ES
dc.description.sponsorshipGovernment of the Russian Federation under Megagrant Program 074-02-2018-330 (2)es_ES
dc.description.sponsorshipMinistry of Science and Higher Education of the Russian Federation under "Priority-2030" Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod N-466-99_2021-2023es_ES
dc.description.sponsorshipEuropean project MEMQuD 20FUN06es_ES
dc.description.sponsorshipEMPIR programmees_ES
dc.description.sponsorshipEuropean Union's Horizon 2020 research and innovation programmees_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject2D materialses_ES
dc.subjectExperimental characterizationes_ES
dc.subjectMemristores_ES
dc.subjectModeling es_ES
dc.subjectResistive memoryes_ES
dc.subjectResistive switchinges_ES
dc.subjectVariabilityes_ES
dc.titleVariability in Resistive Memorieses_ES
dc.typejournal articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/20FUN06es_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1002/aisy.202200338
dc.type.hasVersionVoRes_ES


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