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dc.contributor.authorCalomarde, Antonio
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2022-05-30T11:06:21Z
dc.date.available2022-05-30T11:06:21Z
dc.date.issued2022-05-02
dc.identifier.citationA. Calomarde... [et al.]. "Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact," in IEEE Access, vol. 10, pp. 47169-47178, 2022, doi: [10.1109/ACCESS.2022.3171813]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/75098
dc.descriptionThis work was supported by the Spanish under Grant MCIN/AEI/10.13039/501100011033 and Project PID2019-103869RB-C33.es_ES
dc.description.abstractThis study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been performed to obtain a detailed map of the sensitivity areas in a full cell 6-T SRAM 22 nm bulk-FinFET process. The influence of the well depth on the charge collected by the drain devices of the SRAM cell has been studied, and it has been concluded that the collected charge can be reduced down to 300% simply by modifying the depth of the well, without affecting the performance of the cell. Different PTS layer depths have been analyzed in order to calculate which value minimizes the impact of the charge generated by an ion during its track along the FinFET body. The simulations carried out allow to conclude that the incorporation of a PTS layer not only reduces the leakage current, but also reduces the amount of charge, delivered by the ion, that reaches the drain region. Simulation results also show that the fraction of the charge generated by the ion impact, which is collected by the drain, mainly depends on the depth of the wells, whereas the PTS layer hardly modifies the collected charge. Keywordses_ES
dc.description.sponsorshipMCIN/AEI/10.13039/501100011033 PID2019-103869RB-C33es_ES
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAtribución 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subjectCharge collectiones_ES
dc.subjectSingle event cross sectiones_ES
dc.subjectRadiation hardeninges_ES
dc.subjectSoft errores_ES
dc.subjectSingle event transient (SET)es_ES
dc.subjectSingle event upset (SEU)es_ES
dc.subjectFinFETes_ES
dc.subject3D TCAD modelinges_ES
dc.titleInfluence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impactes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1109/ACCESS.2022.3171813
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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