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dc.contributor.authorRistic, Goran S.
dc.contributor.authorPalma López, Alberto José 
dc.contributor.authorLalena, Antonio M.
dc.identifier.citationGoran S. Ristic... [et al.]. Sensitivity and fading of irradiated RADFETs with different gate voltages, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 1029, 2022, 166473, ISSN 0168-9002, []es_ES
dc.descriptionThis work was supported in part by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science and Technological Development of the Republic of Serbia, under the project No. 43011.es_ES
dc.description.abstractThe radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for the creation of traps during irradiation is performed. The creation of the traps in the oxide, near and at the silicon/silicon-dioxide (Si/SiO2) interface during irradiation is modelled very well. This modelling can also be used for other MOS transistors containing SiO2. The behaviour of radiation traps during postirradiation annealing is analysed, and the corresponding functions for their modelling are obtained. The switching traps (STs) do not have significant influence on threshold voltage shift, and two radiation-induced trap types fit the fixed traps (FTs) very well. The fading does not depend on the positive gate voltage applied during irradiation, but it is twice lower in case there is no gate voltage. A new dosimetric parameter, called the Golden Ratio (GR), is proposed, which represents the ratio between the threshold voltage shift after irradiation and fading after spontaneous annealing. This parameter can be useful for comparing MOS dosimeters.es_ES
dc.description.sponsorshipEuropean Commission 857558es_ES
dc.description.sponsorshipMinistry of Education, Science & Technological Development, Serbia 43011es_ES
dc.rightsAtribución 3.0 España*
dc.subjectpMOS radiation dosimeteres_ES
dc.subjectIrradiation es_ES
dc.titleSensitivity and fading of irradiated RADFETs with different gate voltageses_ES

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Atribución 3.0 España
Except where otherwise noted, this item's license is described as Atribución 3.0 España