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dc.contributor.authorLanza, Mario
dc.contributor.authorRoldán Aranda, Juan Bautista 
dc.date.accessioned2022-03-02T07:33:28Z
dc.date.available2022-03-02T07:33:28Z
dc.date.issued2021-11-03
dc.identifier.citationACS Nano 2021, 15, 17214−17231. [https://doi.org/10.1021/acsnano.1c06980]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/73054
dc.descriptionThis work has been supported by the generous Baseline funding program of the King Abdullah University of Science and Technology (KAUST).es_ES
dc.description.abstractResistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >10(6) cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.es_ES
dc.description.sponsorshipKing Abdullah University of Science & Technologyes_ES
dc.language.isoenges_ES
dc.publisherAmerican Chemical Societyes_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectResistive switchinges_ES
dc.subjectMemristores_ES
dc.subjectMemory es_ES
dc.subjectVariabilityes_ES
dc.subjectReliabilityes_ES
dc.subjectCharacterizationes_ES
dc.subjectMetal-oxidees_ES
dc.subjectEndurancees_ES
dc.titleStandards for the Characterization of Endurance in Resistive Switching Deviceses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1021/acsnano.1c06980
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Atribución-NoComercial-SinDerivadas 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España