Mostrar el registro sencillo del ítem
A Review of Sharp-Switching Band-Modulation Devices
dc.contributor.author | Cristoloveanu, Sorin | |
dc.contributor.author | Navarro Moral, Carlos | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2022-02-01T07:47:58Z | |
dc.date.available | 2022-02-01T07:47:58Z | |
dc.date.issued | 2021-12-11 | |
dc.identifier.citation | Cristoloveanu, S... [et al.]. A Review of Sharp-Switching Band-Modulation Devices. Micromachines 2021, 12, 1540. [https://doi.org/10.3390/mi12121540] | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/72575 | |
dc.description | The European authors are grateful for support from the EU project REMINDER (H2020-687931). Alexander Zaslavsky acknowledges the support of the U.S. National Science Foundation (award QII-TACS-1936221). | es_ES |
dc.description.abstract | This paper reviews the recently-developed class of band-modulation devices, born from the recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body technologies, which have enabled the concept of gate-controlled electrostatic doping. In a lateral PIN diode, two additional gates can construct a reconfigurable PNPN structure with unrivalled sharp-switching capability. We describe the implementation, operation, and various applications of these band-modulation devices. Physical and compact models are presented to explain the output and transfer characteristics in both steady-state and transient modes. Not only can band-modulation devices be used for quasi-vertical current switching, but they also show promise for compact capacitorless memories, electrostatic discharge (ESD) protection, sensing, and reconfigurable circuits, while retaining full compatibility with modern silicon processing and standard room-temperature low-voltage operation. | es_ES |
dc.description.sponsorship | EU project REMINDER H2020-687931 | es_ES |
dc.description.sponsorship | National Science Foundation (NSF) QII-TACS-1936221 | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | MDPI | es_ES |
dc.rights | Atribución 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/es/ | * |
dc.subject | Nanoelectronics | es_ES |
dc.subject | SOI | es_ES |
dc.subject | FDSOI | es_ES |
dc.subject | Electrostatic doping | es_ES |
dc.subject | Band modulation | es_ES |
dc.subject | Sharp switching | es_ES |
dc.subject | Ultrathin body | es_ES |
dc.subject | Memory | es_ES |
dc.subject | ESD | es_ES |
dc.subject | Sensors | es_ES |
dc.subject | Reconfigurable device | es_ES |
dc.subject | Esaki diode | es_ES |
dc.title | A Review of Sharp-Switching Band-Modulation Devices | es_ES |
dc.type | journal article | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/H2020/687931 | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.3390/mi12121540 | |
dc.type.hasVersion | VoR | es_ES |
Ficheros en el ítem
Este ítem aparece en la(s) siguiente(s) colección(ones)
-
OpenAIRE (Open Access Infrastructure for Research in Europe)
Publicaciones financiadas por Framework Programme 7, Horizonte 2020, Horizonte Europa... del European Research Council de la Unión Europea en el marco del Proyecto OpenAIRE que promueve el acceso abierto a Europa.