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dc.contributor.authorCalogero, Gaetano
dc.contributor.authorGonzález Marín, Enrique 
dc.date.accessioned2021-10-20T12:07:43Z
dc.date.available2021-10-20T12:07:43Z
dc.date.issued2021-09-16
dc.identifier.citationCalogero, G... [et al.]. Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces. Sci Rep 11, 18482 (2021). [https://doi.org/10.1038/s41598-021-98080-y]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/71018
dc.descriptionThis work has been supported by the European Commission through the Horizon 2020 Framework Program, Future Emerging Technologies QUEFORMAL project (contract n. 829035). The authors thank Dr. Alessandro Fortunelli for useful discussions.es_ES
dc.description.abstractLateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide ( PtSe2), are promising options for the fabrication of efficient two-dimensional field-effect transistors (FETs), by exploiting the dependence of the energy gap on the number of layers and the intrinsically high quality of the heterojunctions. Key for future progress in this direction is understanding the effects of the physics of the lateral interfaces on farfrom- equilibrium transport properties. In this work, a multi-scale approach to device simulation, capable to include ab-initio modelling of the interfaces in a computationally efficient way, is presented. As an application, p- and n-type monolayer-multilayer PtSe2 LH-FETs are investigated, considering design parameters such as channel length, number of layers and junction quality. The simulations suggest that such transistors can provide high performance in terms of subthreshold characteristics and switching behavior, and that a single channel device is not capable, even in the ballistic defectless limit, to satisfy the requirements of the semiconductor roadmap for the next decade, and that stacked channel devices would be required. It is shown how ab-initio modelling of interfaces provides a reliable physical description of charge displacements in their proximity, which can be crucial to correctly predict device transport properties, especially in presence of strong dipoles, mixed stoichiometries or imperfections.es_ES
dc.description.sponsorshipEuropean Commission European Commission Joint Research Centre 829035es_ES
dc.language.isoenges_ES
dc.publisherNaturees_ES
dc.rightsAtribución 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.titlePhysical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaceses_ES
dc.typejournal articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/829035es_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1038/s41598-021-98080-y
dc.type.hasVersionVoRes_ES


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