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dc.contributor.authorCalomarde, Antonio
dc.contributor.authorMoll, Francesc
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2021-01-21T11:07:52Z
dc.date.available2021-01-21T11:07:52Z
dc.date.issued2020
dc.identifier.citationCalomarde, A., Rubio, A., Moll, F., & Gamiz, F. (2020). Active radiation-hardening strategy in Bulk FinFETs. IEEE access, 8, 201441-201449. [DOI:10.1109/ACCESS.2020.3035974]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/65890
dc.description.abstractIn this paper, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that drives the charge generated by the ion track out of the sensitive device terminals. This electrical field is generated with the insertion of complementary doped regions near the active region of the device. We analyze the influence of the distance of those regions to the device, their depth into the substrate and their doping concentration to determine the optimal implementation which minimizes the collected charge. The impact on the device performance in terms of leakage current, threshold voltage, maximum transconductance and subthreshold voltage swing has also been investigated. Our results show that the added structures introduce negligible effects in performance degradation and total leakage current, at the cost of a small increase in area. The simulations performed with technology computer-aided design numerical (TCAD) tools in 22nm bulk FinFET technology show that the amount of charge collected by the device terminals can be reduced up to 50% for a linear energy transfer (LET) of 60 MeV-cm2/mg.es_ES
dc.description.sponsorshipSpanish Ministry of Economy (MINECO)es_ES
dc.description.sponsorshipEuropean Union (EU) TEC2016-75151-C3-Res_ES
dc.language.isoenges_ES
dc.publisherIEEE Inst Electrical Electronics Engineers Inces_ES
dc.rightsAtribución 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subjectCharge collectiones_ES
dc.subjectSingle event cross section,es_ES
dc.subjectRadiation hardeninges_ES
dc.subjectSoft errores_ES
dc.subjectSingle event transient (SET)es_ES
dc.subjectSingle event upset (SEU)es_ES
dc.subjectFinFETes_ES
dc.subject3D TCAD modelinges_ES
dc.titleActive radiation-hardening strategy in Bulk FinFETses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1109/ACCESS.2020.3035974
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Atribución 3.0 España
Except where otherwise noted, this item's license is described as Atribución 3.0 España