Mostrar el registro sencillo del ítem
Calculation of the Ballistic Current of Few-Layer MoS2 Field-Effect Transistors
dc.contributor.author | García Ruiz, Francisco Javier | |
dc.contributor.author | Biel, Blanca | |
dc.contributor.author | González-Medina, Jose María | |
dc.contributor.author | Toral López, Alejandro | |
dc.contributor.author | González Marín, Enrique | |
dc.contributor.author | Tienda-Luna, Isabel María | |
dc.contributor.author | Godoy Medina, Andrés | |
dc.date.accessioned | 2019-05-08T09:42:19Z | |
dc.date.available | 2019-05-08T09:42:19Z | |
dc.date.issued | 2015 | |
dc.identifier.uri | http://hdl.handle.net/10481/55659 | |
dc.language.iso | eng | es_ES |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | MOSFET | es_ES |
dc.subject | Ballistic Transport | es_ES |
dc.subject | MoS2 | es_ES |
dc.title | Calculation of the Ballistic Current of Few-Layer MoS2 Field-Effect Transistors | es_ES |
dc.type | conference output | es_ES |
dc.rights.accessRights | open access | es_ES |