Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors

dc.contributor.author	González-Medina, Jose María
dc.contributor.author	Garcia Ruiz, Francisco Javier
dc.contributor.author	Godoy Medina, Andrés
dc.contributor.author	González Marín, Enrique
dc.contributor.author	Gámiz Pérez, Francisco Jesús
dc.date.accessioned	2018-05-17T10:05:40Z
dc.date.available	2018-05-17T10:05:40Z
dc.date.issued	2015-02-11
dc.identifier.citation	10th Spanish Conference on Electron Devices [http://digibug.ugr.es/handle/10481/50960]	es_ES
dc.identifier.uri	http://hdl.handle.net/10481/50960
dc.description.abstract	We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the effective mass approximation. Phonon-limited electron mobility is then calculated solving the Boltzmann Transport Equation under the Momentum Relaxation Time approximation for different device sizes and bias conditions.	es_ES
dc.language.iso	eng	es_ES
dc.publisher	IEEE	es_ES
dc.title	Simulation of the phonon-limited electron mobility in multi-layer MoS 2 field-effect transistors	es_ES
dc.type	conference output	es_ES
dc.rights.accessRights	open access	es_ES