Simulation of transmission electron microscopy images using a generalized single-slice approach: The case of self-assembled quantum dots

Abstract

Tools for numerical simulation of transmission electron microscopy (TEM) images are frequently used to provide insight about the origin of contrast features, hence, to understand and to measure correctly the properties of a material. We describe in this work a methodology for simulating the compositional-strain contrast of TEM images of large nanocrystalline heterostructures. The methodology combines finite element calculations and a generalized form of the single slice approach that takes into account also the imaging conditions. It is simple and computationally efficient and as an example of its reliability we compare experimental and simulated images of a sample of self-assembled In(Ga)As/GaAs QDs.