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<title>DETC - Comunicaciones Congresos, Conferencias, ...</title>
<link>https://hdl.handle.net/10481/14179</link>
<description/>
<pubDate>Mon, 20 Apr 2026 07:35:22 GMT</pubDate>
<dc:date>2026-04-20T07:35:22Z</dc:date>
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<title>Flexible Laser-Induced Graphene Memristor: Fabrication and SPICE based Emulation of an Artificial Neural Network</title>
<link>https://hdl.handle.net/10481/91076</link>
<description>Flexible Laser-Induced Graphene Memristor: Fabrication and SPICE based Emulation of an Artificial Neural Network
García Palomo, Mikel; Ganeriwala, Mohit Dineshkumar; Fernández-Sánchez, María del Carmen; Motos-Espada, Roberto; González Marín, Enrique; Ruiz, Francisco G.; Godoy Medina, Andrés
This work demonstrates laser-induced graphene&#13;
memristors, fabricated using a patterning-free, low cost and&#13;
simple process directly on a flexible polyimide substrate. The&#13;
fabricated memristors show repeatable non-volatile bipolar resistive switching with state retention up to 103 seconds. A simple&#13;
perceptron network for the classification of black-and-white&#13;
images is later implemented using an experimentally extracted&#13;
compact model. Successful training of the network by integrating&#13;
SPICE model with MATLAB shows the possibility to emulate&#13;
the on-chip learning process. Further, by properly modulating&#13;
the applied voltage pulse amplitude and period, a reduction in&#13;
the energy consumed by training the neural network is achieved.
Project PID2020-116518GB-I00 funded by MCIN/AEI/10.13039/501100011033; and TED2021-129769B-I00 FlexPowHar and CNS2023-143727 RECAMBIO both funded by MCIN/AEI/10.13039/501100011033 and the European Union NextGenerationEU/PRTR. This work also acknowledges the research project P21 00149 ENERGHENE funded by the University, Research and Innovation Council of the Board of Andalusia. M. D. Ganeriwala ac- knowledges funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No. 101032701.
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<item>
<title>Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories</title>
<link>https://hdl.handle.net/10481/91050</link>
<description>Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories
Cuesta-López, Juan; Marín, Enrique G.; Toral López, Alejandro; Ganeriwala, Mohit Dineshkumar; Ruiz, Francisco G.; Pasadas Cantos, Francisco; Godoy Medina, Andrés
We simulate voltage-driven ion migration in gate oxides&#13;
as a potential mechanism to develop non-volatile&#13;
memories (NVMs) as appropriate candidates for&#13;
neuromorphic computing applications. Our study aims to&#13;
give insights about the impact of ion mobility and ion&#13;
concentration in the device memory window (MW).
This work is funded by the FEDER/Junta de Andalucía&#13;
through the projects A-TIC-646-UGR20 and P20-00633,&#13;
and the Spanish Government&#13;
MCIN/AEI/10.13039/501100011033 through the&#13;
projects PID2020-116518GB-I00 and TED2021-129769B-I00 (NextGenerationEU/PRTR). F. Pasadas&#13;
acknowledges funding from PAIDI 2020 and the&#13;
European Social Fund Operational Programme 2014–2020 no. 20804. J. Cuesta-Lopez acknowledges the FPU&#13;
program FPU019/05132, and M.D. Ganeriwala the EU&#13;
through project H2020-MSCA-IF 2020.
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<item>
<title>Physics-based scalable compact model for terminal charge, intrinsic capacitance and drain current in nanosheet FETs</title>
<link>https://hdl.handle.net/10481/91037</link>
<description>Physics-based scalable compact model for terminal charge, intrinsic capacitance and drain current in nanosheet FETs
Singh, Aishwarya; Ganeriwala, Mohit Dineshkumar; Mohapatra, Nihar
This work presents a physics-based SPICE compatible model&#13;
for Nanosheet FETs, which provides explicit expressions for&#13;
the drain current, terminal charges and intrinsic capacitances.&#13;
The drain current model is based on the drift-diffusion formalism for carrier transport. The terminal charge and intrinsic capacitance models are calculated by adopting the Ward–Dutton linear charge partition scheme that guarantees charge&#13;
conservation. The model uses the novel bottom-up approach&#13;
to calculate the terminal charges, uses very few empirical parameters and is accurate across device dimensions and bias&#13;
conditions.
</description>
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<item>
<title>On the improvement of reliability in 2D devices for sensing</title>
<link>https://hdl.handle.net/10481/79725</link>
<description>On the improvement of reliability in 2D devices for sensing
Márquez González, Carlos
</description>
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</item>
<item>
<title>MSCA contingency plan: the lifeguard during the pandemic</title>
<link>https://hdl.handle.net/10481/72680</link>
<description>MSCA contingency plan: the lifeguard during the pandemic
Márquez González, Carlos
https://www.mariecuriealumni.eu/newsletters/29th-mcaa-newsletter/rebuilding-bridges-msca-contingency-plan-lifeguard-during-pandemic
</description>
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